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BAV20 / BAV21
FAST SWITCHING DIODE Features
* * * * Glass Package for High Reliability Planar Die Construction Low Reverse Leakage Current Also available in Surface Mount Package (BAV20W and BAV21W)
A
B
A
D
C
Mechanical Data
* * * * Case: DO-35, Glass Leads: Solderable per MlL-STD-202, Method 208 Marking: Cathode Band and Type Number Weight: 0.13 grams (approx.)
@ TA = 25C unless otherwise specified Symbol VRRM VRWM VR VR(RMS) IFM I0 @ t = 1.0s IFSM IFRM Pd RqJA Tj, TSTG
DO-35 Dim A B C D Min 25.40 -- -- -- Max -- 4.00 0.60 2.00
All Dimensions in mm
Maximum Ratings
Characteristic Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Average Rectified Output Current (Note 1) Forward Surge Current Repetitive Peak Forward Current (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range
BAV20 200 150 106 250 200 1.0 625 500 300 -65 to +175
BAV21 250 200 141
Unit V V V mA mA A mA mW K/W C
Electrical Characteristics
Characteristic Maximum Forward Voltage Maximum Peak Reverse Current
@ TA = 25C unless otherwise specified Symbol VFM BAV20 BAV20 BAV21 BAV21 IR rf Cj trr Min -- -- -- -- -- Typ -- -- 5.0 1.5 -- Max 1.0 100 15 100 15 -- -- 50 Unit V nA mA nA mA W pF ns Test Condition IF = 100mA VR = 150V VR = 150V, Tj = 100C VR = 200V VR = 200V, Tj = 100C IF = 10mA VR = 0, f = 1.0MHz IF = IR = 30mA to IR = 3.0mA; RL = 100 W
Dynamic Forward Resistance Junction Capacitance Reverse Recovery Time
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 8.0mm.
DS22006 Rev. H-2
1 of 2
BAV20 / BAV21
IF, INSTANTANEOUS FORWARD CURRENT (mA)
IF, IO, INSTANTANEOUS FORWARD CURRENT (A)
1000
Tj = 100 C
0.3
(See Note 1)
100
Tj = 25 C
0.2
DC Current IF
10
1.0
Current (rectif.) IO
0.1
0.1
0.01 0 0.2 0.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics
0
0
30
60
90
120
150
TA, AMBIENT TEMPERATURE (C) Fig. 2 Forward Current Derating
500
(See Note 1)
1000
REVERSE CURRENT RATIO [IR(T)/IR (25C)]
Pd, POWER DISSIPATION (mW)
400
100
300
10
200
100
1
Reverse Voltage BAV20 VR = 150V BAV21 VR = 200V
0 0 100 TA, AMBIENT TEMPERATURE (C) Fig. 3. Power Dissipation Derating 200
0 0
100
200
TJ, JUNCTION TEMPERATURE (C) Fig. 4 Relative Reverse Current vs Junction Temperature
100
1.8
Tj = 25 C
rf, DYNAMIC RESISTANCE, (Ohms)
1.6
Cj, CAPACITANCE (pF)
1.4 1.2 1.0 0.8 0.6 0.4 0.2
10
1 1 10 100 IF, FORWARD CURRENT (mA) Fig. 5 Dynamic Forward Resistance vs Forward Current
0
0.1
1.0
10
100
VR, REVERSE VOLTAGE (V) Fig. 6 Typical Junction Capacitance vs Reverse Voltage
DS22006 Rev. H-2
2 of 2
BAV20 / BAV21

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